其合成物主要是化学当量的 (stoichiometric)Al2O3,这已经得到了 拉塞福散射光谱 ( Rutherford Backscattering Spectrometry )的证实。它的电特性显示了大于8MV/cm的较高的介质击穿场强和较低的渗漏。
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The distribution of rare earth ions embedded into porous silicon films was observed by Rutherford backscattering spectrometry.
用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况。
Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.
卢瑟福背散射分析结果表明,铁、氮两种原子的密度沿膜厚度方向呈梯度变化。
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